Emerging memories: resistive switching mechanisms and current status.

@article{Jeong2012EmergingMR,
  title={Emerging memories: resistive switching mechanisms and current status.},
  author={Doo Seok Jeong and Reji Thomas and Ram Singh Katiyar and James F. Scott and Hermann Kohlstedt and Adrian Petraru and Cheol Seong Hwang},
  journal={Reports on progress in physics. Physical Society},
  year={2012},
  volume={75 7},
  pages={076502}
}
The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena… CONTINUE READING

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