Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array

One of the major reliability concerns in nano-scale CMOS VLSI design is the time-dependent Bias Temperature Instability (BTI) degradation. Negative Bias Temperature Instability and Positive Bias Temperature Instability (NBTI and PBTI) weaken MOSFETs over usage/stress time. We present an embedded 6T SRAM ring oscillator structure which provides in-situ… CONTINUE READING