Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review
@article{Gorji2015EmbeddedNI, title={Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review}, author={Mohammad Saleh Gorji and Kuan Yew Cheong}, journal={Critical Reviews in Solid State and Materials Sciences}, year={2015}, volume={40}, pages={197 - 222} }
Schottky and Ohmic contacts are essential parts of electronic and optoelectronic devices based on semiconductor materials. Controlling the contact/semiconductor interface properties is the key to obtaining a contact with an optimum performance. Contacts incorporated by nanomaterials, i.e., nano-sized particles that are embedded at the interface of contact/semiconductor, can transform the conventional approaches of contact fabrication, resulting in more reproducible, tunable and efficient…
23 Citations
Au nanoparticles embedded at the interface of Al/4H-SiC Schottky contacts for current density enhancement
- Materials Science
- 2015
Nanostructured contacts, comprised of nanoparticles (NPs) embedded at the interface of contact/semiconductor, offer a viable solution in modification of Schottky barrier height (SBH) in Schottky…
Improved figures of merit of nano Schottky diode by embedding and characterizing individual gold nanoparticles on n-Si substrate.
- Physics, Materials ScienceNanotechnology
- 2019
Improvements in the figures of merit (FOM) that characterize the rectification performance including asymmetry (fASYM), and the turn ON voltage due to Au-NP at the interface of AFM tip and n-Si substrate are explained based on the increase in tunneling current at the nanoscale Au- NP/n-Si interface.
Schottky barrier lowering in Al/Si/Al back-to-back Schottky contacts by embedded gold nanoparticles
- Materials Science36th International Electronics Manufacturing Technology Conference
- 2014
Modification of current density in back-to-back Schottky contacts without further heat treatment processes is possible by embedding nanoparticles (NPs) into metal contacts with different work…
Barrier Modification of Metal-contact on Silicon by Sub-2 nm Platinum Nanoparticles and Thin Dielectrics
- PhysicsScientific reports
- 2016
The role of these Pt NP’s size dependent properties, i.e., the Pt NP-metal surface dipole, the Coulomb blockade and quantum confinement effect in determining the degree of Fermi level depinning observed at the studied metal/p-Si interfaces is studied.
Laser-induced interfacial state changes enable tuning of the Schottky-barrier height in SiC
- Materials ScienceApplied Surface Science
- 2019
Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.
- Materials ScienceACS applied materials & interfaces
- 2017
A new approach to creating low-resistance metal-semiconductor ohmic contacts is introduced using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage to achieve ohmic contact to both n- and p- semiconductor.
Flexible multi-wavelength photodetector based on porous silicon nanowires.
- Chemistry, PhysicsNanoscale
- 2018
The porous silicon nanowires reported in this study survived repeated bending and unbending over 10 000 cycles with this bending radius, demonstrating its application potential as a flexible device with multiple-wavelength photosensing capabilities.
Enhancing Photoelectric Response of an Au@Ag/AgI Schottky Contact through Regulation of Localized Surface Plasmon Resonance.
- Materials ScienceJournal of the American Chemical Society
- 2021
A general strategy to enhance PE responses of Schottky contacts is proposed, which may advance the design of LSPR-related PE systems.
Enhanced flux of chemically induced hot electrons on a Pt nanowire/Si nanodiode during decomposition of hydrogen peroxide
- Chemistry, Physics
- 2020
Identifying the charge transfer at metal–semiconductor interfaces by detecting hot electrons is crucial for understanding the mechanism of catalytic reactions and the development of an engineered…
Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures
- Materials ScienceJournal of Materials Science: Materials in Electronics
- 2021
We prepared the Au/Ti/Al2O3/n-GaAs MIS (metal/insulating/semiconductor) structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer thickness of 3 nm, and the diode D2…
References
SHOWING 1-10 OF 113 REFERENCES
Nanopatterned Contacts to GaN
- Materials Science
- 2007
The effect of nanoscale patterning using a self-organized porous anodic alumina (PAA) mask on the electrical properties of ohmic and Schottky contacts to n-GaN was investigated with the aim of…
Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN
- Chemistry
- 2004
The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly…
Nanocrystal-based Ohmic contacts on n and p-type germanium
- Materials Science
- 2012
We report a simple method of forming Ohmic contacts to n and p-type germanium (Ge) simultaneously using Au nanocrystals embedded in Ti contact metal. The electric field due to the work-function…
Gold nanoparticles deposited on linker-free silicon substrate and embedded in aluminum Schottky contact.
- Physics, Materials ScienceJournal of colloid and interface science
- 2013
Ohmic contacts on silicon carbide: The first monolayer and its electronic effect
- Physics, Materials Science
- 2009
We demonstrate that origin of the long-standing contact issue in silicon carbide devices can be understood and technologically manipulated at the atomic level. Using advanced transmission electron…
Room-Temperature Electrical Characteristics of Pd/SiC Diodes with Embedded Au Nanoparticles at the Interface
- Materials Science
- 2010
We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate…
Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots
- Materials Science
- 2004
The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au…
Electron transport at Au/InP interface with nanoscopic exclusions
- Physics
- 1996
We present an investigation of electron transport at the Au/InP metal semiconductor (MS) interface in the presence of nanoscopic barrier inhomogeneities. In particular, we focus on the transport…
Enhancement of electric field properties of Pt/nanoplatelet MoO3/SiC Schottky diode
- Physics
- 2010
A comprehensive investigation of the electric field enhancement on a novel reverse biased Schottky contact induced by nanoplateleted morphology is presented. The phenomenon that causes the…
Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
- Materials ScienceNanoscale Research Letters
- 2012
It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-nPs and the reference samples, respectively.