Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions

@article{Ashok2010ElectrothermalMC,
  title={Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions},
  author={Ashwin Ashok and Dragica Vasileska and O. Hartin and S. M. Goodnick},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={562-570}
}
A Monte Carlo device simulator was developed to investigate the electronic transport properties in AlGaN/GaN high-electron mobility transistors (HEMTs). Electron-electron interactions were included using a particle-particle-particle-mesh coupling scheme. Quantum corrections were applied to the heterointerface using the effective potential approach due to Ferry. Thermal effects were also included by coupling the particle-based device simulator self-consistently with an energy balance solver for… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 30 references

Concurrent thermal and electrical modeling of sub-micrometer silicon devices

  • J. Lai, A. Majumdar
  • J. Appl. Phys., vol. 79, no. 9, p. 7353, May 1996…
  • 1996
Highly Influential
4 Excerpts

AlGaN/GaN HEMT microwave CW power limits

  • L. F. Eastman, J. R. Shealy, V. Tilak, J. Smart, B. Green, T. Prunty
  • Proc. 4th Int. Conf. Nitride Semicond., Denver…
  • 2001
Highly Influential
2 Excerpts

GaN/AlGaN high electron mobility transistors with ft of 110 GHz

  • M. Micovic, N. X. Nguyen, +4 authors C. Nguyen
  • Electron. Lett., vol. 36, no. 4, pp. 358– 359…
  • 2000
Highly Influential
2 Excerpts

Electrothermal analysis of AlGaN/GaN high electron mobility transistors

  • S. Sridharan, A. Venkatachalam, P. D. Yoder
  • J. Comput. Electron., vol. 7, no. 3, pp. 236–239…
  • 2008
1 Excerpt

Modeling thermal effects in nanodevices

  • R. D. Vasileska, S. M. Goodnick, M. Nedjalkov
  • IEEE Trans. Electron Devices, vol. 55, no. 6, pp…
  • 2008
2 Excerpts

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

  • T. Sadi, R. W. Kelsall, N. J. Pilgrim
  • J. Comput. Electron., vol. 6, no. 1–3, pp. 35–39…
  • 2007

Hot phonons in GaN channels for HEMTs

  • A. Matulionis
  • Phys. Stat. Sol. A, vol. 203, no. 10, pp. 2313…
  • 2006
2 Excerpts

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