Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions

@article{Ashok2010ElectrothermalMC,
title={Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions},
author={Ashwin Ashok and Dragica Vasileska and O. Hartin and S. M. Goodnick},
journal={IEEE Transactions on Electron Devices},
year={2010},
volume={57},
pages={562-570}
}

Published 2010 in IEEE Transactions on Electron Devices

A Monte Carlo device simulator was developed to investigate the electronic transport properties in AlGaN/GaN high-electron mobility transistors (HEMTs). Electron-electron interactions were included using a particle-particle-particle-mesh coupling scheme. Quantum corrections were applied to the heterointerface using the effective potential approach due to Ferry. Thermal effects were also included by coupling the particle-based device simulator self-consistently with an energy balance solver for… CONTINUE READING