Electrothermal Access Resistance Model for GaN-Based HEMTs

@article{Thorsell2011ElectrothermalAR,
  title={Electrothermal Access Resistance Model for GaN-Based HEMTs},
  author={Mattias Thorsell and Kristoffer Andersson and Hans Hjelmgren and Niklas Rorsman},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={466-472}
}
The high-power density in GaN-based high-electron-mobility transistors (HEMTs) increases demands on the accurate extraction and modeling of electrothermal effects such as self-heating. This paper presents a new electrothermal model of the access resistances in GaN HEMTs, taking into account both self heating and bias dependence. A coplanar ungated transfer length method (TLM) structure has been used to extract the resistance versus temperature, bias, and RF power. The temperature dependence is… CONTINUE READING
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