Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

@article{Radosavljevi2011ElectrostaticsII,
  title={Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation},
  author={M. Radosavljevi{\'c} and G. Dewey and D. Basu and J. Boardman and B. Chu-Kung and J. Fastenau and S. Kabehie and J. Kavalieros and V. Le and W. Liu and D. Lubyshev and M. Metz and K. Millard and N. Mukherjee and L. Pan and R. Pillarisetty and W. Rachmady and U. Shah and H. Then and R. Chau},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={33.1.1-33.1.4}
}
In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (LSIDE) have been fabricated and compared. For the first time, 3-D Tri-gate InGaAs devices demonstrate electrostatics improvement over the ultra-thin (QW thickness, TQW=10nm) body planar InGaAs device due to (i) narrow fin width (WFIN) of 30nm and (ii) high quality high-K gate dielectric interface on the InGaAs fin… Expand
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