Electrostatic doping of graphene through ultrathin hexagonal boron nitride films.


When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metal|h-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential… (More)
DOI: 10.1021/nl202131q


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