Electronic structure origins of polarity-dependent high-TC ferromagnetism in oxide-diluted magnetic semiconductors.

@article{Kittilstved2006ElectronicSO,
  title={Electronic structure origins of polarity-dependent high-TC ferromagnetism in oxide-diluted magnetic semiconductors.},
  author={Kevin R Kittilstved and William K Liu and Daniel R Gamelin},
  journal={Nature materials},
  year={2006},
  volume={5 4},
  pages={291-7}
}
Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood. Here we demonstrate a close link between the electronic structures and polarity-dependent high-TC ferromagnetism of TM(2+):ZnO DMSs, where TM(2+) denotes 3d transition metal… CONTINUE READING

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