Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.

@article{Varchon2007ElectronicSO,
  title={Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.},
  author={F. Varchon and R. Feng and Joanna Hass and Xiaofeng Li and B Ngoc Nguyen and Cecile Naud and Pierre Mallet and Jean Yves Veuillen and Claire Berger and Edward H. Conrad and Laurence Magaud},
  journal={Physical review letters},
  year={2007},
  volume={99 12},
  pages={
          126805
        }
}
A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence… Expand
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