Electronic structure of InyGa1ÀyAs1ÀxNx ÕGaAs multiple quantum wells in the dilute-N regime from pressure and k"p studies

Abstract

We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa12yAs12xNx /GaAs multiple quantum well samples as functions of hydrostatic pressure ~at room temperature! and temperature ~at ambient pressure!. The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k•p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys.

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Cite this paper

@inproceedings{Choulis2002ElectronicSO, title={Electronic structure of InyGa1ÀyAs1ÀxNx ÕGaAs multiple quantum wells in the dilute-N regime from pressure and k"p studies}, author={Stelios A Choulis and Thomas J. C. Hosea and Stanko S Tomi{\'c} and M. Kamal-Saadi and Alfred R. Adams and Eoin P. O’Reilly and Bernard A. Weinstein and Peter J. Klar}, year={2002} }