Electronic structure and reactivity of the TiO thin film formed on a TiC(100) surface

@inproceedings{Shirotori2004ElectronicSA,
  title={Electronic structure and reactivity of the TiO thin film formed on a TiC(100) surface},
  author={Y. Shirotori and K. Sawada and Kenichi Ozawa and Kazuyuki Edamoto},
  year={2004}
}
  • Y. Shirotori, K. Sawada, +1 author Kazuyuki Edamoto
  • Published 2004
  • Materials Science
  • Abstract The surface electronic structure and reactivity of the TiO thin film formed on a TiC(100) surface have been investigated using angle-resolved photoemission spectroscopy (ARPES), utilizing synchrotron radiation and ultraviolet photoemission spectroscopy (UPS). It has been found that the TiO(100) thin film is formed on the surface when the TiC(100) surface exposed to 500–1000 L of O 2 is heated at 1000 °C. ARPES measurements show that two-dimensional metallic states are formed in the TiO… CONTINUE READING

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