Electronic structure and magnetism for FeSi (1−x) Ge x from supercell calculations
@article{Jarlborg2004ElectronicSA, title={Electronic structure and magnetism for FeSi (1−x) Ge x from supercell calculations}, author={Thomas N. Jarlborg}, journal={Journal of Magnetism and Magnetic Materials}, year={2004}, volume={283}, pages={238-246} }
9 Citations
The semiconductor-to-ferromagnetic-metal transition in FeSb2
- Physics, Materials Science
- 2006
Abstract.We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog
of FeSi. We find that despite different compositions and crystal structures,
in the local…
Electronic structure of Fe4Si4–x Gex (x = 0–4) compounds: ab initio calculation
- Chemistry
- 2009
The structural and electronic properties of Fe4Si4–x Gex (x = 0–4) with a cubic B20‐type structure are investigated by density functional theory using an ab initio method. The calculations are based…
Metallic state in cubic FeGe beyond its quantum phase transition.
- PhysicsPhysical review letters
- 2007
Results of electrical resistivity and structural investigations on the cubic modification of FeGe under high pressure suggest that the suppression of T(C) disagrees with the standard notion of a quantum critical phase transition.
Optical evidence for heavy charge carriers in FeGe
- Physics
- 2007
The optical spectrum of the cubic helimagnetic metal FeGe has been investigated in the frequency range from 0.01 - 3.1 eV for different temperatures from 30 K to 296 K. The optical conductivity shows…
Control of Dzyaloshinskii-Moriya interaction in Mn1−xFexGe: a first-principles study
- Materials ScienceScientific reports
- 2015
By means of first-principles calculations, this work successfully reproduce the non-trivial sign change of the DM interaction observed in the experiment, paving the new way for skyrmion crystal engineering in metallic helimagnets.
Preparation of amorphous FexSi(1 − x) film using unbalanced magnetron sputtering
- Physics, Materials Science
- 2010
References
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The results of linear augmented-plane-wave band calculations for cubic FeSi, carried out in the local-density approximation, predict a small (-0.11 eV) indirect semiconductor gap which agrees well…
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Local-density calculations of the electronic structure as a function of temperature T and applied magnetic field H are presented for FeSi, finding that low-T properties are understood from mean-field calculations based on the band structure, but spin fluctuations have to be invoked to describe properties for T larger than about 200 K.
First-order transition from a Kondo insulator to a ferromagnetic metal in single crystalline FeSi(1-x)Ge(x).
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The phase diagram of FeSi(1-x)Ge(x), obtained from magnetic, thermal, and transport measurements on single crystals, shows a discontinuous transition from Kondo insulator to ferromagnetic metal with…
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Thermodynamics of FeSi.
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It is concluded that, given the available alternatives, a Kondo insulator description---involving an extreme renormalization of the noninteracting bands---is most appropriate for FeSi.
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Temperature-induced local moments in MnSi and FeSi
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A unified theory is given of the magnetic and thermal properties of the itinerant-electron magnet MnSi and the non-magnetic semiconductor FeSi. The calculations are based on the spin-fluctuation…
Electronic structure and optical properties of FeSi, a strongly correlated insulator.
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The optical response incorporating simple finite-temperature effects, namely, electron-phonon scattering of intrinsic carriers, is calculated and it is found that this provides a poor direct fit to recent infrared measurements.
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