Electronic structure and identification of deep defects in GaP

Abstract

We report a theoretical study of the Ga vacancy, the P antisite defect (i.e., a P atom occupying a normally Ga site), and carbon impurities at Ga sites. The analysis employs a modified version of the self-consistent Green s-function method that was previously used to describe deep centers in Si. In Rll three cases, the nuInber, orbital content, and relative… (More)

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Cite this paper

@inproceedings{Scheffler2011ElectronicSA, title={Electronic structure and identification of deep defects in GaP}, author={Max Scheffler and Jerry Bernholc and N. O. Lipari and S. T. Pantelides}, year={2011} }