Electronic states in graded-gap junctions with band inversion

@article{DomnguezAdame1995ElectronicSI,
  title={Electronic states in graded-gap junctions with band inversion},
  author={Francisco Dom{\'i}nguez-Adame},
  journal={Physics Letters A},
  year={1995},
  volume={202},
  pages={395-397}
}
2 Citations
Effect of Boundary Conditions on the Interface Tamm's States
The interface Tamm's states of heterojunctions formed from narrow-gap semiconductors are intensively studied. Trying to elucidate the effect of the boundary conditions on the interface states, in
Interface effects of strained semiconductor heterostructure in longitudinal magnetic field
In the present work it is shown that the strained semiconductor structure in the magnetic field is an interesting object with unusual properties. The electron spectrum and some physical properties of

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