Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects

@article{Seyller2006ElectronicPO,
  title={Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects},
  author={Thomas Karl. Seyller},
  journal={Applied Physics A},
  year={2006},
  volume={85},
  pages={371-385}
}
The wide band gap semiconductor silicon carbide (SiC) is the first-choice material for power electronic devices operating at high voltages, high temperatures, and high switching frequencies. Due to their importance for crystal growth, processing, and device fabrication, the electronic properties of SiC surfaces and interfaces to other materials such as metals and dielectrics are of particular interest. Unreconstructed, H-terminated SiC surfaces which are passivated in a chemical as well as an… CONTINUE READING

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