Electronic properties and phase transitions in low-dimensional semiconductors

  title={Electronic properties and phase transitions in low-dimensional semiconductors},
  author={A. M. Panich},
  journal={Journal of Physics: Condensed Matter},
  • A. Panich
  • Published 10 April 2008
  • Materials Science, Physics, Chemistry
  • Journal of Physics: Condensed Matter
We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I–V characteristics (including a region of negative differential resistance… 
Structural, Vibrational, and Electronic Properties of 1D-TlInTe2 under High Pressure: A Combined Experimental and Theoretical Study.
The findings on TlInTe2 open up a new avenue to study unexplored high-pressure novel phenomena in TlSe family induced by Lifshitz transition (electronic driven), giant phonon softening, and electron-phonon coupling.
Anisotropic optical constants and inter-band optical transitions in layered semiconductor TlGaSe 2
Abstract The dielectric function spectra of TlGaSe 2 crystal with quasi-two-dimensional layered structure were studied over the photon range 1.5–5.0 eV in the temperature range 80–400 K. The (100)
Origin of superconductivity and giant phonon softening in TlInTe$_2$ under pressure.
Analogous to 2D layered transition metal dichalcogenides, the TlSe family of 1D chain materials with Zintl-type structure exhibits exotic phenomena under high-pressure. In the present work, we have
Structural, electrical and anisotropic properties of Tl4Se3S chain crystals
The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl{sub 4}Se{sub 3}S chain crystals have been studied by means of X-ray diffraction,
Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals
The temperature dependences of the conductivity σ(T) and the switching and memory effects in one-dimensional TlInSe2 and TlInTe2 single crystals have been studied. A specific feature is found in the
Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes
Abstract The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect
Memory effect and new polarized state in the incommensurate phase of TlGaSe2 ferroelectric – semiconductor
The structural, electrical, and thermal properties of the ferroelectric-semiconductor TlGaSe2 have been investigated after the thermal annealing of crystals inside the incommensurate (INC) phase for
Temperature dependence of dielectric function and optical transitions in TlInSe2 and TlGaTe2
The principal components of the dielectric function of TlInSe 2 and TlGaTe 2 crystals with quasi-one-dimensional chain structure have been studied over the photon energies 1.5―5.0eV in the
First-principles study of giant thermoelectric power in incommensurate TlInSe2
Ternary thallium compound TlInSe2 exhibits a giant Seebeck effect below around 410 K, where Tl atoms form one dimensional incommensurate (IC) arrays. To clarify the origin of large thermoelectric
Band structures and optical properties related to substitutional impurities in TlGaSe2 layered crystals: first-principles study
ABSTRACT In this paper, an investigation of the electronic and optical properties of the TlGaSe2 pure layered crystal and TlGaSe2 doped with substitutional impurities in the framework of the density


Nuclear exchange coupling and electronic structure of low-dimensional semiconductors
We review the nuclear magnetic resonance (NMR) studies of the indirect nuclear exchange coupling and electronic structure of the chain and layered semiconductors Tl(I)M(III)X2 (M = Tl, Ga, In, X =
Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity-doped gamma-irradiated incommensurate TlInS2
Temperature-dependent dielectric and conduction properties of the impurity-doped and gamma-irradiated samples of TlInS 2 semiconductor-ferroelectric with incommensurate phase are presented. As found,
Phase transitions and electrical conductivity of TlInS2
The temperature dependence of the electrical conductivity of a TlInS2 single crystal has been investigated under static (δT/δt = 0) and dynamic (δT/δt ≠ 0) conditions. Under the static condition, the
The Phase Transition of TlTe: Crystal Structure
Abstract Though already known since the year 1912, reliable structural data of the semimetallic phase TlTe down and below the reported phase-transition temperature of 170 K were still lacking. To
Optical and photoelectric properties of TlGaSe2 layered crystals
Abstract Absorption spectra of thin layers of TlGaSe2 crystals are used to study the energy gap and the interband transitions of the compound in the energy region 1.5–3.8 eV and in the temperature
On the non-linear properties of TlInX2 (X = S, Se, Te) ternary compounds
Abstract Optical and electrical properties of the TlInX 2 (X = S, Se, Te) were studied. The selenides and tellurides are of chain-like structure while the sulfides are layered. The measurements ( I-U
Crystal chemistry and superconductivity of pressure-induced phases in the InTe system
Abstract In the InTe system, a pressure-induced Nad-type phase exists in the region In 0.80 Te to In 1.5 Te. Superconductivity exists in the whole range, with the maximum transition temperature
Second harmonic generation in layered TunS2 in the vicinity of the low-temperature phase transitions
Abstract Second-harmonic generation in the ternary layered semiconductor TlInS2 excited with the wavelength λ = 1.06 μm of YAG: Nd3 + laser is investigated in the temperature range corresponding to
Low-temperature metallic conductivity in the semiconductor TlSe having a chain structure
The results of experimental investigations of the electrical conductivity, magnetoresistance and Hall effect in the semiconductor TlSe with a chain structure are presented. The measurements of
The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TlGaSe2
The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS2 and TlGaSe2 have been studied following their annealing within the incommensurate phase. Unusual