Electronic packaging of SiC MOSFET-based devices for reliable high temperature operation

Abstract

Silicon carbide (SiC) devices allow electronics to operate at high junction temperatures (>200°C) and high voltages (>10 kV). In addition, they provide faster switching and lower power losses than their silicon-based counterparts. Recently, MOSFET (metal-oxide semiconductor field effect transistor) devices were demonstrated to work up to 500°C. Robust… (More)
DOI: 10.1109/ISCAS.2015.7168847

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