Electronic bipolar resistive switching behavior in Ni/VOx/Al device

@inproceedings{Xia2017ElectronicBR,
  title={Electronic bipolar resistive switching behavior in Ni/VOx/Al device},
  author={Mingliang Xia and Kailiang Zhang and Ruixia Yang and Fang Wang and Zhichao Zhang and Shijian Wu},
  year={2017}
}
Abstract In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature… CONTINUE READING

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