Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications

@article{Rengel2010ElectronicTI,
  title={Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications},
  author={Raux0301l Rengel and Marix0301a Jesux0301s Martin},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={2448-2454}
}
In this paper, an ensemble Monte Carlo investigation of the static and dynamic performances in the high-frequency domain of laterally asymmetric channel (LAC) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. A detailed comparison with a homogeneously doped bulk device is also included. The results presented show that the use… CONTINUE READING