Electronic Structure and Metal-Insulator Transition in Amorphous Pd-Si Alloy Films

@inproceedings{Tanaka1995ElectronicSA,
  title={Electronic Structure and Metal-Insulator Transition in Amorphous Pd-Si Alloy Films},
  author={Kazuhide Tanaka and Kenichiro Furui and Masaaki Yamada},
  year={1995}
}
The Pd x Si 100- x system forms a homogeneous amorphous phase over a wide range of composition (0≤ x ≤91, excluding regions near PdSi and Pd 2 Si) when the alloy is deposited on a substrate by sputtering at ambient temperature. The electrical conductivity of the amorphous alloy changes characteristically with Pd concentration from a semiconductor to a metal, the transition taking place at x c ≈12. UPS valence band spectra show that the density of states at the Fermi level is minimal for x < x c… CONTINUE READING