Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress.

@article{Noyce2019ElectronicSO,
  title={Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress.},
  author={Steven G. Noyce and James L Doherty and Zhihui Cheng and Hui Han and Shan Bowen and Aaron D. Franklin},
  journal={Nano letters},
  year={2019},
  volume={19 3},
  pages={
          1460-1466
        }
}
Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative impact. Yet, the effect of long-term bias stress on individual CNTs, critical for most sensing applications, has remained uncertain. Here, we report bias ranges under which CNT transistors can operate continuously for months or more without degradation. Using a custom characterization system, the impacts of defect formation and charge traps on… 

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