Electronic Properties of a-SiO<inline-formula><tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula>N<inline-formula><tex-math notation="LaTeX">${}_{y}$</tex-math></inline-formula>:H/SiN<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math></inline-formula> Stacks for Surface Pass

@article{Cheng2016ElectronicPO,
  title={Electronic Properties of a-SiO<inline-formula><tex-math notation="LaTeX">\$\{\}_\{x\}\$</tex-math> </inline-formula>N<inline-formula><tex-math notation="LaTeX">\$\{\}_\{y\}\$</tex-math></inline-formula>:H/SiN<inline-formula> <tex-math notation="LaTeX">\$\{\}_\{x\}\$</tex-math></inline-formula> Stacks for Surface Pass},
  author={Xuemei Cheng and Halvard Haug and Marisa Di Sabatino and Junjie Zhu and Erik Stensrud Marstein},
  journal={IEEE Journal of Photovoltaics},
  year={2016},
  volume={6},
  pages={1103-1108}
}
The surface passivation quality of plasma-enhanced chemical vapor-deposited silicon oxynitride/silicon nitride (a-SiO<sub>x</sub>N<sub>y</sub>:H/SiN<sub>x</sub>) stacks has been investigated for p-type float-zone crystalline silicon wafers. The effective lifetime τ<sub>eff</sub>, density of fixed charge Q<sub>f</sub>, and density of interface defects D<sub>it</sub> were measured as a function of the a-SiO<sub>x</sub>N<sub>y</sub>:H layer thickness both before and after firing at 800°C for 3 s… CONTINUE READING

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