Electronic Charge Transport in Thin SiO2 Films

@inproceedings{Wolters1988ElectronicCT,
  title={Electronic Charge Transport in Thin SiO2 Films},
  author={Dieter Wolters and A. T. A. Zegers-van Duynhoven},
  year={1988}
}
  • Dieter Wolters, A. T. A. Zegers-van Duynhoven
  • Published 1988
  • Materials Science
  • Some observations concerning the Fowler Nordheim conduction of electrons in SiO2 are reviewed. The substrate hole currents accompanying the tunneling currents possibly originate from photon stimulated emission. Coulomb repulsion between adjacent sites inhibits trapping in the dielectric and realistic trapping kinetics have to account for this, as has been illustrated for high field and for avalanche injection. 

    Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv

    Citations

    Publications citing this paper.
    SHOWING 1-3 OF 3 CITATIONS

    Tunnelling in thin SiO2