Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths

@article{Shahidi1986ElectronVO,
  title={Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths},
  author={G. Shahidi and D. Antoniadis and H. I. Smith},
  journal={1986 International Electron Devices Meeting},
  year={1986},
  pages={824-825}
}
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