Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths

  title={Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths},
  author={G. Shahidi and D. Antoniadis and H. I. Smith},
  journal={1986 International Electron Devices Meeting},
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