## The electron velocityfield characteristic for nlno siGao , 4 , As at 300 K

- L. W. Cook, G. E. Stillman
- IEEE Electron Device Lett .
- 1985

@article{Nag1986ElectronVI, title={Electron velocity in short samples of Ga0.47In0.53As at 300 K}, author={B R Nag and S. R. Ahmed and M. D. Roy}, journal={IEEE Transactions on Electron Devices}, year={1986}, volume={33}, pages={788-791} }

- Published 1986 in IEEE Transactions on Electron Devices

Velocity-field characteristics of short samples of n-type Ga<inf>0.47</inf>In<inf>0.53</inf>As are calculated for 300 K using a Monte Carlo model and recent values of physical constants. The average electron velocity reaches a peak value for a field of about<tex>0.5/L</tex>(V . cm<sup>-1</sup>),<tex>L</tex>being the sample length in centimeters. The peak… CONTINUE READING

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