Electron tunneling through ultrathin boron nitride crystalline barriers.

  title={Electron tunneling through ultrathin boron nitride crystalline barriers.},
  author={Liam Britnell and Roman V. Gorbachev and Rashid Jalil and Branson D Belle and Fred Schedin and Mikhail I. Katsnelson and L. Eaves and Sergey V. Morozov and Alexander S. Mayorov and Nuno Miguel Machado Reis Peres and Antonio H. Castro Neto and Jon Leist and Andre K Geim and Leonid A. Ponomarenko and Kostya S. Novoselov},
  journal={Nano letters},
  volume={12 3},
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically… CONTINUE READING
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