Electron transport through asymmetric ferroelectric tunnel junctions: Current-voltage characteristics

  title={Electron transport through asymmetric ferroelectric tunnel junctions: Current-voltage characteristics},
  author={Natalya A. Zimbovskaya},
  journal={Journal of Applied Physics},
  • N. Zimbovskaya
  • Published 17 December 2009
  • Physics
  • Journal of Applied Physics
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces noticeably differ due to dissimilarity of the interfaces. Obtained conductance versus voltage and current versus voltage curves exhibit well distinguishable asymmetric hysteresis. We show that the asymmetry in the hysteretic effects could originate from the… 
7 Citations

Figures from this paper

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
Current-voltage characteristics and P–E loops are simulated in SrRuO3/BaTiO3/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen
Ferroelectric tunneling under bias voltages
Theoretical investigations of ferroelectric tunneling in a SrRuO3/BaTiO3/Pt junction were conducted, and critical expressions for the surface charge density in the electrodes and the potential
Effects of applied bias voltage in tunnel junctions with ferroelectric barrier
Effects of applied bias voltage on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions with ferroelectric barrier and dissimilar ferromagnetic electrodes are
Ferroelectric/Semiconductor/Tunnel-Junction Stacks for Nondestructive and Low-Power Read-Out Memory
We demonstrate that a tunnel junction connected in series to the ferroelectric (FE) via a semiconductor (SC) layer can be used to 1 probe the polarization state in an FE thin-film capacitor. A
Electroresistance effect in ferroelectric tunnel junctions with symmetric electrodes.
This work demonstrates at the first-principles level that large TER values of about 200% can be achieved under finite bias in a prototypical FTJ with symmetric electrodes, and provides a critical discussion of the semiempirical models traditionally used to describe FTJs.
Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis
Abstract In this work, we report on the variability of the Schottky effect in solution processed Ba1-xSrxTiO3 films (BST, x = 0, 0.5) grown on 0.5% Nb doped SrTiO3 substrates with top Pt electrodes


Giant Electroresistance in Ferroelectric Tunnel Junctions
The interplay between the electron transport in metal-ferroelectric-metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which
Theoretical current-voltage characteristics of ferroelectric tunnel junctions
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage
Giant piezoelectric resistance in ferroelectric tunnel junctions.
It is found that reversing an applied stress can also change the tunnel barrier sufficiently to produce an effect similar to the giant electro-resistance one due to polarization reversal, which is particularly significant near the stress-dependent paraelectric/ferroelectric phase transition.
Effect of ferroelectricity on electron transport in Pt/BaTiO3/Pt tunnel junctions.
The impact of the electric polarization on electron transport in ferroelectric tunnel junctions (FTJs) is demonstrated and exciting prospects that FTJs offer as resistive switches in nanoscale electronic devices are revealed.
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.
The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature, promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
Resistive switching in metal–ferroelectric–metal junctions
The aim of this work is to investigate the electron transport through metal–ferroelectric–metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state
Magnetic tunnel junctions with ferroelectric barriers: prediction of four resistance States from first principles.
It is found that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel.
Polarization Control of Electron Tunneling into Ferroelectric Surfaces
It is shown that the tip of an atomic force microscope can be used to pattern polarization domains in a thin film of lead zirconate titanate in high electric fields similar to those for field emission tips.
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
The approach exploits the otherwise undesirable leakage current—dominated by tunnelling at these very low thicknesses—to read the polarization state without destroying it, and demonstrates scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch-2.
Tunnel junctions with multiferroic barriers.
This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.