Electron transport in ultrathin double-gate SOI devices

@inproceedings{Gmiz2001ElectronTI,
  title={Electron transport in ultrathin double-gate SOI devices},
  author={Francisco G{\'a}miz and Juan B. Rold{\'a}n and J. A. L{\'o}pez-Villanueva and F. Jim{\'e}nez-Molinos and J. E. Carceller},
  year={2001}
}
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used.  2001 Elsevier Science B.V. All rights reserved. 
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