Electron spin resonance and spin-valley physics in a silicon double quantum dot.

Abstract

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the… (More)
DOI: 10.1038/ncomms4860

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