Electron spin relaxation under drift in GaAs

@article{Barry2003ElectronSR,
  title={Electron spin relaxation under drift in GaAs},
  author={E. Barry and A. Kiselev and K. Kim},
  journal={Applied Physics Letters},
  year={2003},
  volume={82},
  pages={3686-3688}
}
  • E. Barry, A. Kiselev, K. Kim
  • Published 2003
  • Physics
  • Applied Physics Letters
  • Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or nonzero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly… CONTINUE READING
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