Electron spin relaxation in InGaAs/InP multiple-quantum wells

@inproceedings{Tackeuchi1997ElectronSR,
  title={Electron spin relaxation in InGaAs/InP multiple-quantum wells},
  author={Atsushi Tackeuchi and Osamu Wada and Yuji Nishikawa},
  year={1997}
}
The electron spin relaxation of InGaAs/InP multiple-quantum wells (MQW) is investigated using time-resolved polarization-dependent absorption measurement. The MQW has an excitonic absorption at 1.54 μm which is suitable for application in optical communications. A theoretical prediction assuming the D’yakonov-Perel’ interaction as the main relaxation mechanism gives a spin relaxation rate for the InGaAs quantum well over twice as high as that for the GaAs quantum well. The spin relaxation time… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 14 CITATIONS

Simulation of spin-polarized transport in submicrometer device structures

S. Saikin, M.-C. Cheng, V. Privman
  • 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.
  • 2003

Similar Papers