Electron-polariton scattering in semiconductor microcavities.

Abstract

In semiconductor microcavities, electron-polariton scattering has been proposed as an efficient process that can drive polaritons from the bottleneck region to the ground state, achieving Bose amplification of the optical emission. We present clear experimental observation of this process in a structure that allows control of the electron density and we report substantial enhancement of photoluminescence. We show that this enhancement is more effective at higher temperatures due to the different way that electron scattering processes either broaden or relax polaritons.

Cite this paper

@article{Lagoudakis2003ElectronpolaritonSI, title={Electron-polariton scattering in semiconductor microcavities.}, author={Pavlos Lagoudakis and Michael D. Martin and Jeremy J Baumberg and Angie Qarry and Eliahu Cohen and Loren N. Pfeiffer}, journal={Physical review letters}, year={2003}, volume={90 20}, pages={206401} }