Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

Abstract

Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide– semiconductor field-effect transistors with a silicon film thickness as low as 5 nm. The Poisson and Schr!dinger equations have been self-consistently solved to take into account inversion layer quantization. To evaluate the electron mobility, the Boltzmann… (More)

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Cite this paper

@inproceedings{Gamiz1999ElectronMI, title={Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers}, author={F. Gamiz and J. B. Rold{\'a}n and Pedro Cartujo-Cassinello and J. E. Carceller and J. A. L{\'o}pez-Villanueva and S. Rodriguez}, year={1999} }