Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

@article{Welser1994ElectronME,
  title={Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors},
  author={Jeffrey J. Welser and J. L. Hoyt and J. F. Gibbons},
  journal={IEEE Electron Device Letters},
  year={1994},
  volume={15},
  pages={100-102}
}
Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/. Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si. Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si. Similar enhancements are… CONTINUE READING
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