Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

@article{SanRomanAlerigi2013ElectronII,
  title={Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film},
  author={Dami'an P. San-Rom'an-Alerigi and Dalaver Hussain Anjum and Yaping Zhang and Xiaoming Yang and Ahmed Benslimane and Tien Khee Ng and Mohammad A. A. Alsunaidi and Boon Siew Ooi},
  journal={Journal of Applied Physics},
  year={2013},
  volume={113},
  pages={044116}
}
In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As2S3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ≥40%. Consequently a reduction of… Expand

Figures and Tables from this paper

Electron beam induced changes in optical properties of glassy As35S65 chalcogenide thin films studied by imaging ellipsometry
Abstract Spectroscopic imaging ellipsometry was used to study 50 μm × 50 μm squares recorded into glassy As35S65 thin film by electron beam with different exposure doses. Optical constantsExpand
Electron beam effects in Ge–Se thin films and resistance change memory devices
Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devices – conductive bridge random access memory (CBRAM). To understand the nature of the effects occurringExpand
E-Beam Induced Effects in Ge-Se Based Redox Conductive Bridge Memory Devices and Thin Films
Chalcogenide glasses (ChG) are the advanced material for the emerging nanoionic memory devices — conductive-bridging RAM (CBRAM). In order to understand the nature of the effects occurring withinExpand
Investigation of a chalcohalide glass optical waveguide structure fabricated by dual-energy carbon-ion implantation.
TLDR
A planar waveguide structure in a chalcohalide glass was fabricated by dual-energy C ion implantation with energies of 5.5 and 6.0 MeV and the near-field intensity distributions were investigated at visible and near-infrared bands. Expand
Electron-beam induced surface relief shape inversion in amorphous Ge4As4Se92 thin films
Abstract The effects of electron beam interaction with Ge 4 As 4 Se 92 amorphous film surface have been studied. The dependence of the surface relief shape on the irradiation dose has been analyzed.Expand
Active tuning of electromagnetically induced transparency from chalcogenide-only metasurface
Electromagnetically induced transparency (EIT) is a coherent optical process that provides a narrow transparent peak within a broad absorption line in an atomic medium. All-dielectric metasurfaceExpand
All dielectric reconfigurable metamaterials
This thesis reports on my research efforts towards all-dielectric metamaterials with reconfigurable functionalities: • I have reported the first optomechanical nonlinear dielectric metamaterial. IExpand
All-dielectric phase-change reconfigurable metasurface
We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials.Expand
The Role of Transient Perturbations and Heterogeneities in Subsurface Wave Propagation - A Scalable Numerical Solution
The objective of this work is to present the development of a numerical model for wave propagation in materials with time-varying, heterogeneous, and non-linear properties. Materials change withExpand
Probing the electronic structures and properties of neutral and charged arsenic sulfides (AsnS(−1,0,+1), n = 1–7) using Gaussian-3 theory
TLDR
The structures and energies of neutral and charged arsenic sulfides AsnS (−1,0,+1) (n = 1–7) were systematically investigated using the G3 method and the adiabatic electron affinities and AIPs were presented. Expand
...
1
2
...

References

SHOWING 1-10 OF 63 REFERENCES
Optical characterization of As2S3 and As2Se3 semiconducting glass films of non-uniform thickness from transmission measurements
Abstract Based on the interference fringes in transmission spectra at normal incidence of thin films of As 2 S 3 and As 2 Se 3 semiconducting glass compositions deposited by thermal evaporation, aExpand
Effect of electric field on photoinduced changes in the optical properties of chalcogenide glassy semiconductors
The influence of an applied electric field on the photoinduced changes in the optical properties of glassy chalcogenide semiconductor films of the (As2S3)x(As2Se3)1−x solid solution system has beenExpand
The anisotropic photorefractive effect in bulk As2S3 glass induced by polarized subgap laser light
A strong, optically anisotropic, metastable photorefractive effect is observed in bulk As2S3 glass when illuminated with a subgap polarized He-Ne laser beam. When the laser beam is focused at or nearExpand
Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films
Abstract Change of electronic structure and chemical composition on the surface of freshly prepared As 35 S 65 thin films caused by electron- and light irradiation have been studied byExpand
Model-based determination of dielectric function by STEM low-loss EELS
Dielectric properties of materials are crucial in describing the electromagnetic response of materials. As devices are becoming considerably smaller than the optical wavelength, the conventionalExpand
Electron beam induced changes in the refractive index and film thickness of amorphous AsxS100−x and AsxSe100−x films
In this article, electron beam induced changes in the refractive index and film thickness of time relaxed amorphous AsxS100−x (with x=30–45) and AsxSe100−x (with x=40–70) are studied. The largestExpand
Electron Interaction in Solids. Characteristic Energy Loss Spectrum
The characteristic energy loss spectrum of solids is analyzed with the aid of the dielectric formulation of the many-body problem developed by the authors. It is shown that a measurement of theExpand
Electron energy-loss spectroscopy in the TEM
Electron energy-loss spectroscopy (EELS) is an analytical technique that measures the change in kinetic energy of electrons after they have interacted with a specimen. When carried out in a modernExpand
Optical properties and bandgaps from low loss EELS: pitfalls and solutions.
TLDR
It is demonstrated that for bandgap determination not only the accurate removal of the ZLP is crucial, moreover also retardation losses have to be taken into account. Expand
Optical excitations in electron microscopy
This review discusses how low-energy, valence excitations created by swift electrons can render information on the optical response of structured materials with unmatched spatial resolution. ElectronExpand
...
1
2
3
4
5
...