Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling.

Abstract

The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, DeltaV(p-n), by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of… (More)
DOI: 10.1093/jmicro/dfm037

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Cite this paper

@article{Yoo2008ElectronHS, title={Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling.}, author={Jung Ho Yoo and Jun-Mo Yang and Shaislamov Ulugbek and Chi Won Ahn and Wook-Jung Hwang and Joong Keun Park and Chul Min Park and Seung Bum Hong and Joong Jung Kim and Daisuke Shindo}, journal={Journal of electron microscopy}, year={2008}, volume={57 1}, pages={13-8} }