Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study
@article{Kahraman2020ElectronGS, title={Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study}, author={Mustafa Kahraman and Ceyhun Bulutay}, journal={Physical Review B}, year={2020} }
We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$-tensor of embedded InGaAs quantum dots (QDs). A large structural set consisting of geometry, size, molar fraction and strain variations is worked out. The tensor components are observed to show insignificant discrepancies even for the highly anisotropic shapes. The family of $g$-factor curves associated with these parameter combinations coalesce to a single universal one…
One Citation
Electron g-factor in nanostructures: continuum media and atomistic approach
- Materials ScienceScientific reports
- 2020
An effective, mesoscopic model for InAs is proposed that is able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million.
References
SHOWING 1-10 OF 106 REFERENCES
Efficient electronic structure calculations for extended systems of coupled quantum dots using a linear combination of quantum dot orbitals method
- PhysicsPhysical Review B
- 2021
We present a novel ``linear combination of atomic orbitals''-type of approximation, enabling accurate electronic structure calculations for systems of up to 20 or more electronically coupled quantum…
Anisotropic g factor in InAs self-assembled quantum dots
- Physics
- 2014
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric…
Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots
- Physics
- 2004
We have investigated Zeeman splitting in single self-assembled InAs and InGaAs quantum dots experimentally and theoretically. By measuring photoluminescence from single dots, in a wide spectral…
Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots
- Physics
- 2016
GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole in-filling offer a combination of strong charge confinement, optical efficiency, and high spatial symmetry advantageous for…
Universal behavior of electron g -factors in semiconductor nanostructures
- Physics
- 2017
We combine analytic developments and numerical tight-binding calculations to study the evolution of the electron $g$-factors in homogeneous nanostructures of III-V and II-VI semiconductors. We…
Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots
- Physics
- 2016
The tunability of the exciton $g$ factor in InGaAs quantum dots using compressive biaxial stress applied by piezoelectric actuators is investigated. We find a clear relation between the exciton $g$…
Landé g tensor in semiconductor nanostructures.
- PhysicsPhysical review letters
- 2006
This work explores the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells.
Electron g factor in one- and zero-dimensional semiconductor nanostructures
- Materials Science
- 1998
We investigate theoretically the Zeeman effect on the lowest confined electron in quantum wires and quantum dots. A general relation is established between the symmetry of a low-dimensional system…
Tuning of g -factor in self-assembled In(Ga)As quantum dots through strain engineering
- Materials Science
- 2005
We have investigated the effect of strain on the $g$-factors of self-assembled In(Ga)As dots by single-dot spectroscopy and an eight-band effective mass calculation taking into account the influence…
Limited accuracy of conduction band effective mass equations for semiconductor quantum dots
- PhysicsScientific Reports
- 2018
This work presents a systematic derivation of a conduction-band effective mass equation for a self-assembled semiconductor quantum dot in a magnetic field from the 8-band k · p theory and indicates the importance of preserving the off-diagonal terms of the valence band Hamiltonian.