Electron beam switched P-N junctions

@inproceedings{Brown1963ElectronBS,
  title={Electron beam switched P-N junctions},
  author={Anne V Brown},
  year={1963}
}
A high-speed, high-power switching device is analyzed and experimental results presented. The device consists of a back-biased p-n junction switched by an electron beam. A single position tube for use as a magnetic core driver has been tested. The device operated at a beam voltage of 19 kv and can give a 150-v, 1.5-a output pulse with a rise time of less than 4 nsec and a maximum device power dissipation of 14 w. Designs for a multiposition device and also a high-power amplifier, similar in… CONTINUE READING

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