Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodes

@inproceedings{Ryzhii2000ElectronAP,
  title={Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodes},
  author={Victor Ryzhii and Irina Khmyrova},
  booktitle={Photonics West - Optoelectronic Materials and Devices},
  year={2000}
}
This paper presents the recent developments of device models for quantum dot IR photodetectors (QDIPs) and for imagers based on the integration of these photodetectors with light emitting diodes (LEDs). We derive analytical formulas for the dark current and the responsivity in QDIPs based on different QD structures and the QDIP-LED contrast transfer characteristic as functions of the structural parameters and the bias voltage. It is shown that the characteristics of QDIPs are strongly affected… Expand
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This article reviews the current state of research involving semiconductor quantum dots, provides a brief review of the theory behind their unique properties, and an introduction explaining theExpand
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Characteristics Analysis of Contrast Transfer Images Based on Optoelectronic Integrators
Received: 15th Oct. 2020 Accepted: 14th Apr. 2021 The present study is concerned with overcoming the resultant image degradation due to the integration of the optoelectronics instruments (OEIDs).Expand

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