Electron and hole traps in X‐ray irradiated Y2SiO5 and Lu2SiO5 crystals

@inproceedings{Krner2014ElectronAH,
  title={Electron and hole traps in X‐ray irradiated Y2SiO5 and Lu2SiO5 crystals},
  author={Tiit K{\"a}rner and V. V. Laguta and Martin Nikl and S. Zazubovich},
  year={2014}
}
Characteristics of thermally stimulated luminescence (TSL) are studied for the X-ray irradiated at 4, 80, or 295 K nominally undoped Y2SiO5 and Lu2SiO5 single crystals of different origin, containing traps for holes (Ce3+, Tb3+ ions) and electrons (Eu3+, Mo6+ ions), as well as for the Sm3+-doped Lu2SiO5 crystal. For the first time, the TSL glow curves of these materials are measured separately for the electron (Ce3+-, Tb3+-related) and hole (Sm3+-, Eu3+-related) recombination luminescence… CONTINUE READING

Citations

Publications citing this paper.