Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen

@inproceedings{Miki1988ElectronAH,
  title={Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen},
  author={Hiroshi Miki and Masanori Noguchi and Kazuhiko Yokogawa and Kim Bo-Woo and Kunihiro Asada and Takuo Sugano},
  year={1988}
}
The densities of electron and hole traps in SiO/sub 2/ films, thermally grown on Si substrates in ultra-dry oxygen, were compared with those in SiO/sub 2/ films grown in pyrogenic steam (wet-oxide films). The results show that ultra-dry-oxide films have an undetectable density of electron traps that is less that 10/sup 11//cm/sup 2/, and little interface-states generation during carrier injection. However, hole traps in ultra-dry-oxide films are high, (2.6+or-0.1)*10/sup 12//cm/sup 2/ compared… CONTINUE READING