Electron-acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots: Matrix and quantum confinement effects

@article{Huntzinger2006ElectronacousticphononIA,
  title={Electron-acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots: Matrix and quantum confinement effects},
  author={J. Huntzinger and A. Mlayah and V. Paillard and A. Wellner and N. Combe and C. Bonafos},
  journal={Physical Review B},
  year={2006},
  volume={74},
  pages={115308}
}
Calculations of the electron-acoustic phonon interaction, and Raman scattering efficiency, in matrix embedded Ge quantum dots (QDs) are presented. The work is focused on the understanding of the inelastic light scattering process excited close to resonance with the confined E-1 transitions. Due to the large joint density of states at the E-1 point, many intermediate electronic states contribute to the overall scattering efficiency. This particular situation leads to quantum interference effects… Expand
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