Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

@article{Bentley2011ElectronMI,
  title={Electron Mobility in Surface- and Buried-Channel Flatband  \$\hbox\{In\}_\{0.53\}\hbox\{Ga\}_\{0.47\}\hbox\{As\}\$ MOSFETs With ALD  \$\hbox\{Al\}_\{2\}\hbox\{O\}_\{3\}\$ Gate Dielectric},
  author={S. J. Bentley and M. Holland and Xu Li and Gary W Paterson and Haiping Zhou and Olesya Ignatova and Douglas S. Macintyre and Stephen Thoms and A. Asenov and Byungha Shin and Jaesoo Ahn and P. C. Mcintyre and Iain G. Thayne},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={494-496}
}
In this letter, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As devices employing an atomic layer-deposited Al<sub>2</sub>O<sub>3</sub> gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm<sup>2</sup>/V · s and 6600 cm<sup>2</sup>/V · s at a carrier density of 3 × 10<sup>12</sup> cm<sup>-2</sup> were determined for the surfaceand buried… CONTINUE READING

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References

Publications referenced by this paper.
SHOWING 1-10 OF 12 REFERENCES

Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High-k Dielectrics

A. Ali, H. Madan, S. Koveshnikov, Suman Datta
  • 2009
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL