Electron Lifetime Determination in Semiconductor Gamma Detector Arrayes
@article{Lachish2017ElectronLD,
title={Electron Lifetime Determination in Semiconductor Gamma Detector Arrayes},
author={Uri Lachish},
journal={arXiv: Instrumentation and Detectors},
year={2017}
}Hecht equation is not adequate to analyzing standard measurements, of the mobility-lifetime product, carried out with single pixels of detector arrays. A modified expression is calculated, in order to have correct mobility-lifetime values out of experimental data.
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References
SHOWING 1-7 OF 7 REFERENCES
Driving spectral resolution to the noise limit in semiconductor gamma detector arrays
- Physics2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149)
- 2000
Shape time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. Steady flow of gamma generated charge, in a detector bulk,…
CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors
- Materials Science
- 2016
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly…
The role of semiconductors in digital x-ray medical imaging
Hard X-Ray, Gamma Ray, and Neutron Detector Physics
- SPIE Proc