Electron-Induced Single-Event Upsets in Static Random Access Memory

@article{King2013ElectronInducedSU,
  title={Electron-Induced Single-Event Upsets in Static Random Access Memory},
  author={M. P. King and R. A. Reed and R. A. Weller and M. H. Mendenhall and R. D. Schrimpf and B. D. Sierawski and A. L. Sternberg and Balaji Narasimham and Jung K. Wang and Elli Pitta and Brandon Bartz and Dan Reed and Carl Monzel and R. C. Baumann and Xiaowei Deng and J. A. Pellish and M. D. Berg and C. M. Seidleck and Elizabeth C. Auden and Stephanie L. Weeden-Wright and Nelson J. Gaspard and C. X. Zhang and D. M. Fleetwood},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={4122-4129}
}
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets are observed within 10% of nominal supply voltage for devices built in the 28 nm technology node. Simulation results provide supporting evidence that upsets are produced by energetic electrons generated by incident X-rays. The observed errors are shown not to be the result of “weak bits” or photocurrents resulting from the collective energy deposition from X-rays… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 27 references

International roadmap for semiconductors 2012 update

  • Semiconductor Industry Association SIA
  • [Online]. Available: http://www.itrs.net 2012
  • 2012
1 Excerpt

Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics

  • M. P. King, R. A. Reed, +5 authors S. L. Weeden-Wright
  • Appl. Phys. Lett., vol. 101, pp. 053509–053509–3…
  • 2012
2 Excerpts

SEU due to electrons in silicon devices with nanometric sensitive volumes and small critical charge

  • J. Barak, M. Murat, A. Akkerman
  • Nucl. Instrum. Methods B, vol. 287, pp. 113–119…
  • 2012
2 Excerpts

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