Electromigration of 300 µm diameter Sn-3.0Ag-0.5Cu lead-free bumps in flip chip package

Abstract

The electromigration (EM) behavior of 300 &#x00B5;m Sn-3.0Ag-0.5Cu solder bumps on Au/Ni-P substrate metallization in flip chip package was investigated at 150 &#x00B0;C with a current density of 5&#x00D7;10<sup>3</sup> A/cm<sup>2</sup>. After reflowing for three times, the massive spalling of original intermetallic compound (IMC) of (Cu,Ni)<inf>6</inf>Sn… (More)

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Cite this paper

@article{Ye2010ElectromigrationO3, title={Electromigration of 300 µm diameter Sn-3.0Ag-0.5Cu lead-free bumps in flip chip package}, author={Song Ye and Mingliang Huang and Leida Chen and Xiaoying Liu}, journal={2010 11th International Conference on Electronic Packaging Technology & High Density Packaging}, year={2010}, pages={1132-1137} }