Electromigration effect on Cu-pillar(Sn) bumps

@article{Lee2005ElectromigrationEO,
  title={Electromigration effect on Cu-pillar(Sn) bumps},
  author={Sang Myung Lee and Y. X. Guo and C. K. Ong},
  journal={2005 7th Electronic Packaging Technology Conference},
  year={2005},
  volume={1},
  pages={5 pp.-}
}
Increased current density per bump is inevitable with the growing demand for miniaturization. Hence, the electromigration failure mode of bumps is critical to determine the bump current carrying capability. This paper presents the electromigration failure study of the copper pillar (Cu-pillar) bump and compared to that of the solder bumps. Our analysis shows that the Cu-pillar bump could handle higher current which is attributed to its unique structure. Conducted experiment shows that the… CONTINUE READING

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