Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

@article{Simon2013ElectromigrationCO,
  title={Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects},
  author={Andrew H. Simon and T. Bolom and Congrong Niu and Frieder H. Baumann and Changhui Hu and Christopher Parks and Joyeeta Nag and Hyungwook Kim and J. Y. Lee and C.-C. Yang and Sylvia Nguyen and H. K. Shobha and Takeshi Nogami and Srinivas Guggilla and J. Ren and D. Sabens and Joseph Aubuchon},
  journal={2013 IEEE International Reliability Physics Symposium (IRPS)},
  year={2013},
  pages={3F.4.1-3F.4.6}
}
Alternate metallization schemes for copper interconnect using selective CVD Co capping at the 22nm technology node are investigated. Control splits fabricated with PVD Ta(N) barrier/liner layers and CuMn alloy seedlayers are compared against interconnects fabricated using a PVD TaN barrier/CVD Co liner scheme with selective CVD Co capping. Secondary ion mass spectroscopy (SIMS) studies of PVD TaN barrier/CVD Co liner structures indicates that top-surface segregation of the Mn-dopant in alloy… CONTINUE READING
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