Electromigration Testing of Ti/Al-Si Metallization for Integrated Circuits

Electromigration tests have been performed on a two layer metal system consisting of a thin Ti barrier (0.1-0.175¿m) underlying a 1.0-1.25 ¿m conductor of Al-Si. The titanium not only acts as a diffusion barrier against contact spiking, but also maintains electrical continuity in the event of void formation in the Al-Si layer. It is shown that large… CONTINUE READING