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# Electromigration Failure Distributions of Cu/Low-$k$ Dual-Damascene Vias: Impact of the Critical Current Density and a New Reliability Extrapolation Methodology

@article{Oates2009ElectromigrationFD, title={Electromigration Failure Distributions of Cu/Low-\$k\$ Dual-Damascene Vias: Impact of the Critical Current Density and a New Reliability Extrapolation Methodology}, author={A. S. Oates and M. H. Lin}, journal={IEEE Transactions on Device and Materials Reliability}, year={2009}, volume={9}, pages={244-254} }

- Published 2009 in IEEE Transactions on Device and Materials…

We examine the effects of void morphology and critical current density (jc) on the electromigration failure distributions of Cu/low-k dual-damascene vias. Cu dual-damascene vias exhibit multiple modes of electromigration-induced voiding, and reliability is strongly dependent on the morphology of voids. We have developed a model of failure for dc and pulsed dc currents that allows prediction of failure time distributions for vias, taking into account void morphology. We obtain good agreement… CONTINUE READING

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